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2SB1658

Part Number	2SB1658
Manufacturer	JCET
Description	PNP Transistor
Published	Aug 19, 2017
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB1658 TRANSISTOR (PNP) TO ...
Datasheet	2SB1658 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-126 Plastic-Encapsulate Transistors 2SB1658 TRANSISTOR (PNP) TO – 126 FEATURES z Low VCE(sat) z High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -30 -30 -6 -5 1 125 150 -55~+150 1.
EMITTER 2.
COLLECTOR 3.
BASE Unit V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter b...

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