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2SB1261

Part Number	2SB1261
Manufacturer	JCET
Description	PNP Transistor
Published	Aug 19, 2017
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SB1261 TRANSISTOR (PNP) TO ...
Datasheet	2SB1261 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-252 Plastic-Encapsulate Transistors 2SB1261 TRANSISTOR (PNP) TO – 252 FEATURES z Low VCE(sat) z High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -60 -60 -7 -3 1 125 150 -55~+150 1.
BASE 2.
COLLECTOR 3.
EMITTER Unit V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector cut-off current ICBO Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage IEBO hFE(1)* hFE(2)* hFE(3)* VCE(sat)* VBE(sat)* Coll...

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