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2SA1357

Inchange Semiconductor
Part Number 2SA1357
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Aug 19, 2017
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC= -5.0A ·DC Current Gain- : hFE= 70(Min)@IC= -4A...
Datasheet PDF File 2SA1357 PDF File

2SA1357
2SA1357

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC= -5.
0A ·DC Current Gain- : hFE= 70(Min)@IC= -4A ·Low Saturation Voltage : VCE(sat)= -1.
0V(Max)@IC= -4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Strobe flash applications.
·Audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -5 A ICP Collector Current-Pulse -8 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -1 A 10 W 1.
5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1357 isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDI...


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