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MJE253

Inchange Semiconductor
Part Number MJE253
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Aug 19, 2017
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -100 V(Min) ·DC Curren...
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MJE253
MJE253

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -100 V(Min) ·DC Current Gain- : hFE = 40(Min) @ IC= -0.
2 A ·Low Collector Saturation Voltage- : VCE(sat) = -0.
3V(Max.
)@ IC= -0.
5 A ·Complement to the NPN MJE243 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low-current, high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Ti Junction Temperature -1 A 1.
5 W 15 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance,Junction to Case Therm...


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