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MJE243

Inchange Semiconductor
Part Number MJE243
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Aug 19, 2017
Detailed Description isc Silicon NPN Power Transistor MJE243 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 100 V(Min) ·D...
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MJE243
MJE243

Overview
isc Silicon NPN Power Transistor MJE243 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 100 V(Min) ·DC Current Gain- : hFE = 40(Min) @ IC= 0.
2 A ·Low Collector Saturation Voltage- : VCE(sat) = 0.
3V(Max.
)@ IC= 0.
5 A ·Complement to the PNP MJE253 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low-current, high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 100 VCEO Collector-Emitter Voltage 100 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 4 ICM Collector Current-Peak 8 IB Base Current 1 Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ 1.
5 15 Ti Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.
34 ℃/W ...


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