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MJE243

Part Number	MJE243
Manufacturer	CDIL
Description	NPN EPITAXIAL SILICON POWER TRANSISTOR
Published	Aug 19, 2017
Detailed Description	Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER T...
Datasheet	MJE243 PDF File

Overview

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package ECB Complementary MJE253 Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Continuous Collector Current Peak Base Current Total Power Dissipation @ Tc=25 ºC Derate Above 25ºC Total Power Dissipation @ Ta=25 ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VEBO IC IB PD PD Tj, Tstg Value 100 100 7.
0 4.
0 8.
0 1.
0 15 0.
12 1.
5 0.
012 - 65 to +150 UNIT V V V A A W W/ºC W W/ºC ºC Thermal Characteristics Junction to Case Junction to Ambient Rth(j-c) Rth(j-a) 8.
34 ºC/W 83.
4 ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION Collector Emitter Sustaning Voltage Collector Cut off Current SYMBOL VCEO (Sus) I...

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