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BC639

Part Number	BC639
Manufacturer	ON Semiconductor
Description	High Current Transistors
Published	Aug 12, 2017
Detailed Description	BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rati...
Datasheet	BC639 PDF File

Overview

BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector - Emitter Voltage Symbol BC637 BC639 VCEO Value 60 80 Unit Vdc Collector - Base Voltage BC637 BC639 VCBO 60 80 Vdc Emitter - Base Voltage Collector Current − Continuous Total Device Dissipation Derate above 25°C @ TA = 25°C VEBO IC PD 5.
0 Vdc 1.
0 Adc 625 mW 5.
0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 800 mW 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resi...

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