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MMBT3906T

WEITRON
Part Number MMBT3906T
Manufacturer WEITRON
Description General Purpose Transistor PNP Silicon
Published Aug 7, 2017
Detailed Description General Purpose Transistor PNP Silicon P b Lead(Pb)-Free Maximum Ratings Rating Collector-Emitter Voltage Collector-Base...
Datasheet PDF File MMBT3906T PDF File

MMBT3906T
MMBT3906T

Overview
General Purpose Transistor PNP Silicon P b Lead(Pb)-Free Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1) TA=25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC MMBT3906T 1 2 3 SC-89 (SOT-523F) Value -40 -40 -5.
0 -200 Unit V V V mA Symbol PD RθJA PD RθJA TJ Tstg Max 200 1.
6 600 300 2.
4 400 -55 to +150 -55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C °C Device Marking MMBT3906T = 2A Electrical Characteristics (TA=25°C Unless Otherwise noted) Characteristics Off Characteristics Collector-Emitter Breakdown Voltage(3) (IC=-1.
0mAdc.
IB=0) Collector-Base Breakdown Voltage (IC=-10 µAdc, IE=0) Emitter-Bas...


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