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MMBT3906T

LGE
Part Number MMBT3906T
Manufacturer LGE
Description PNP Transistor
Published Aug 7, 2017
Detailed Description 1. BASE 2. EMITTER 3. COLLECTOR Features — Epitaxial Planar Die Construction — Complementary NPN Type Available — Also A...
Datasheet PDF File MMBT3906T PDF File

MMBT3906T
MMBT3906T

Overview
1.
BASE 2.
EMITTER 3.
COLLECTOR Features — Epitaxial Planar Die Construction — Complementary NPN Type Available — Also Available in Lead Free Version MARKING:3N MMBT3906T SOT-523 Transistor (PNP) SOT-523 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Dimensions in inches and (millimeters) Value Units VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous -40 -40 -5.
0 -200 V V V mA PC Collector Power Dissipation 150 mW RƟJA Thermal Resistance, Junction to Ambient 833 ℃/W TJ Operating Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -40 V Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current V(BR)CEO V(BR)EBO ICBO IEBO IC=-1mA,IB...


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