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KTD1624

GME
Part Number KTD1624
Manufacturer GME
Description NPN Silicon Epitaxial Planar Transistor
Published Aug 7, 2017
Detailed Description NPN Silicon Epitaxial Planar Transistor FEATURES Pb  Adoption of MBIT processes. Lead-free  Low collector-to-emit...
Datasheet PDF File KTD1624 PDF File

KTD1624
KTD1624

Overview
NPN Silicon Epitaxial Planar Transistor FEATURES Pb  Adoption of MBIT processes.
Lead-free  Low collector-to-emitter saturation voltage.
 Fast switching speed.
 Large current capacity and wide ASO.
 Complementary: KTB1124.
Production specification KTD1624 ORDERING INFORMATION Type No.
Marking KTD1624 YA/YB/YC SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 6 IC Collector Current -Continuous 3 ICP Collector Current –Continuous(Pulse) 6 PC Collector Dissipation 500 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A A mW ℃ E014 Rev.
A www.
gmicroelec.
com 1 Production specification NPN Silicon Epitaxial Planar Transistor KTD1624 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Collector cut-off current Emitter cut-off current Symbol ICBO IEBO...


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