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KTA1666

GME
Part Number KTA1666
Manufacturer GME
Description PNP Silicon Epitaxial Planar Transistor
Published Aug 7, 2017
Detailed Description Production specification PNP Silicon Epitaxial Planar Transistor FEATURES Pb z High speed switching time. Lead-free...
Datasheet PDF File KTA1666 PDF File

KTA1666
KTA1666

Overview
Production specification PNP Silicon Epitaxial Planar Transistor FEATURES Pb z High speed switching time.
Lead-free z Low saturation voltage:VCE(sat)=-0.
5V(Max) z PC=1~2W(Mounted on ceramic substrate) z Small flat package.
z Complementary: KTC4379.
KTA1666 APPLICATIONS z Power amplifier application.
z Power switching application.
ORDERING INFORMATION Type No.
Marking KTA1666 WO/WY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC IB PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base Current Collector Dissipation Junction Temperature Storage Temperature Range -50 -50 -5 -2 -0.
4 500 150 -55 to +150 Units V V V A A mW ℃ ℃ E001 Rev.
A www.
gmicroelec.
com 1 Production specification PNP Silicon Epitaxial Planar Transistor KTA1666 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditio...


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