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2SD2150

HOTTECH
Part Number 2SD2150
Manufacturer HOTTECH
Description NPN Transistor
Published Aug 6, 2017
Detailed Description Plastic-Encapsulate Transistors FEATURES Excellent current-to-gain characteristics Low collector saturation voltage VCE...
Datasheet PDF File 2SD2150 PDF File

2SD2150
2SD2150


Overview
Plastic-Encapsulate Transistors FEATURES Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) VCE(sat)=0.
5V(max) for IC/IB=2A/0.
1A 2SD2150(NPN) MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation VCBO VCEO VEBO IC PC 40 20 6 2000 500 V V V mA mW Junction Temperature TJ 150 Storage Temperature Tstg -55-150 1.
BASE 2.
COLLECTO 3.
EMITTER SOT-89 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC =50uA, IE=0 40 V Collector-emitter breakdown voltage VCEO IC =1mA, IB=0 20 V Emitter-base breakdown voltage VEBO IE=50μA, IC=0 6 V Collector cut-off current ICBO VCB=30V, IE=0 0.
1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.
1 μA DC current gain Collector-emitter satur...


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