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2SD2150

GME
Part Number 2SD2150
Manufacturer GME
Description Low Frequency Transistor
Published Aug 6, 2017
Detailed Description Production specification LOW FREQUENCY TRANSISTER（20V，3A） FEATURES z Low VCE(sat) :VCE(sat) =0.2V(Typ.) (IC/IB=2A/0.1A...
Datasheet PDF File 2SD2150 PDF File

2SD2150
2SD2150


Overview
Production specification LOW FREQUENCY TRANSISTER（20V，3A） FEATURES z Low VCE(sat) :VCE(sat) =0.
2V(Typ.
) (IC/IB=2A/0.
1A).
z Excellent current gain characteristics.
z Complements the 2SB1424.
Pb Lead-free 2SD2150 Structure Epitaxial planar type NPN silicon transistor.
ORDERING INFORMATION Type No.
Marking 2SD2150 CFR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC PC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector power dissipation 40 V 20 V 6V 3 A(DC) 5 A(Pulse)*1 0.
5 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature *1 Single pulse Pw=10ms -55 to +150 ℃ E031 Rev.
A www.
gmicroelec.
com 1 Production specification LOW FREQUENCY TRANSISTER（20V，3A） 2SD2150 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltag...


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