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2SD1119

Part Number	2SD1119
Manufacturer	HOTTECH
Description	NPN Transistor
Published	Aug 6, 2017
Detailed Description	Plastic-Encapsulate Transistors FEATURES • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation p...
Datasheet	2SD1119 PDF File

Overview

Plastic-Encapsulate Transistors FEATURES • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the low voltage power supply.
Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Storage Temperature unless otherwise noted) Symbol Value VCBO 40 VCEO 25 VEBO 7 IC 3 PC 0.
75 Tstg -55to +150 Unit V V V A W ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage VCBO IC =100μA, IE=0 Collector-emitter breakdown voltage VCEO IC =1mA, IB=0...

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