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2SD1119

Part Number	2SD1119
Manufacturer	JCET
Description	NPN Transistor
Published	Aug 6, 2017
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD1119 TRANSISTOR (NPN) F...
Datasheet	2SD1119 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD1119 TRANSISTOR (NPN) FEATURES z Low collector-emitter saturation voltage VCE(sat) z Satisfactory operation performances at high efficiency with the low voltage power supply.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Value 40 25 7 3 500 150 -55~150 Unit V V V A mW ℃ ℃ SOT-89-3L 1.
BASE 2.
COLLECTOR 3.
EMITTER 1 2 3 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specifie...

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