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NE85634

Part Number	NE85634
Manufacturer	CEL
Description	NPN SILICON RF TRANSISTOR
Published	Aug 6, 2017
Detailed Description	NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATI...
Datasheet	NE85634 PDF File

Overview

NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.
1 dB TYP.
, Ga = 7.
5 dB TYP.
@ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.
8 dB TYP.
, Ga = 9.
0 dB TYP.
@ VCE = 10 V, IC = 40 mA, f = 1 GHz • High power gain : MAG = 10 dB TYP.
@ IC = 40 mA, f = 1 GHz • Large Ptot : Ptot = 1.
2 W (Mounted on 16 cm2  0.
7 mm (t) ceramic substrate) • Small package : 3-pin power minimold package ORDERING INFORMATION Part Number NE85634-A 2SC3357-A NE85634-T1-A 2SC3357-T1-A Quantity 25 pcs (Non reel) (Pb-Free) Supplying Form • 12 mm wide embossed taping 1 kpcs/reel (Pb-Free) • Co...

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