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2SB798

Part Number	2SB798
Manufacturer	GME
Description	PNP Epitaxial Planar Silicon Transistors
Published	Aug 6, 2017
Detailed Description	PNP Epitaxial Planar Silicon Transistors FEATURES z Low collector-emitter saturation Pb Lead-free voltage VCE(sat).<...
Datasheet	2SB798 PDF File

Overview

PNP Epitaxial Planar Silicon Transistors FEATURES z Low collector-emitter saturation Pb Lead-free voltage VCE(sat).
<-0.
4V(IC=-0.
1A,IB=-100mA) z Excellent DC Current Gain Linearity: HFE=100 TYP.
(VCE=-1.
0V IC=-0.
1 Production specification 2SB798 ORDERING INFORMATION Type No.
Marking 2SB798 KR/KQ/KP SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Pulse(Note1) -30 V -25 V -5.
0 V -1.
0 A -1.
5 A PC Collector Dissipation(Note2) 2W Tj,Tstg Junction and Storage Temperature -55 to +150 Note: 1.
PW≤10ms，Duty Cycle≤50%; 2.
When mounted on a ceramic substrate of 16cm2*0.
7mm; ℃ E148 Rev.
A www.
gmicroelec.
com 1 Production specification PNP Epitaxial Planar Silicon Transistors 2SB798 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX ...

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