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2SB1386

JCET
Part Number 2SB1386
Manufacturer JCET
Description PNP Transistor
Published Aug 5, 2017
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1386 TRANSISTOR (PNP) ...
Datasheet PDF File 2SB1386 PDF File

2SB1386
2SB1386


Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1386 TRANSISTOR (PNP) SOT-89-3L FEATURES z Low collector saturation voltage z Execllent current-to-gain characteristics 1.
BASE 2.
COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3.
EMITTER Symbol Parameter VCBO Collector-Base Voltage Value -30 Unit V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Continuous Collector Current -5 A ICP* Pulsed Collector Current -10 A PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature 0.
5 150 -55~150 W ℃ ℃ *Single pulse,PW=10ms ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test co...


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