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2SB1386

Power Silicon
Part Number 2SB1386
Manufacturer Power Silicon
Description PNP GENERAL PURPOSE TRANSISTORS
Published Aug 5, 2017
Detailed Description DATA SHEET 2SB1386 PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -20 Volts CURRENT -5.0 Ampere FEATURES z NPN SILICON EPITAXI...
Datasheet PDF File 2SB1386 PDF File

2SB1386
2SB1386


Overview
DATA SHEET 2SB1386 PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -20 Volts CURRENT -5.
0 Ampere FEATURES z NPN SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS z COLLECTOR-EMITTER VOLTAGE VCE = -20V z COLLECTOR CURRENT IC = -5 A .
181 (4.
6) .
173( 4.
4) .
061 (1.
55)REF.
0.
063 (1.
6 ) 0.
055 (145 ) .
1 6 7( 4.
2 5) .
15 5 (3 .
9 4 ) .
10 2 (2 .
6 ) .
0 91 (2 .
3) 1.
2 0 .
9 MECHANICAL DATA z CASE：SOT-89,PLASTIC z TERMINALS：SOLDERABLE PER MIL-STD-202, METHOD 208 z APPROX.
WEIGHT:0.
002 GRAMS .
023(0.
58) .
016(0.
40) .
020(0.
52) .
013(0.
32) .
060(1.
5)TYP.
.
118(3.
0)TYP.
.
017(0.
44) .
014(0.
35) CASE：SOT-89 DIMENSIONS IN INCHES (MILLIMETERS) MAXIMUM RATINGS RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED.
PARAMETER SYMBOL COLLECTOR-EMITTER VOLTAGE VCEO COLLECTOR-BASE VOLTAGE VCBO EMITTER-BASE VOLTAGE VEBO COLLECTOR CURRENT-CONTINUOUS IC COLLECTOR POWER DISSIPATION PC JUNCTION AND STORAGE TEMPERATURE RANGE TJ,TSTG NOTE: 1.
INDICATES DATA IN A...


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