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2SB1386

GME
Part Number 2SB1386
Manufacturer GME
Description PNP Silicon Epitaxial Planar Transistor
Published Aug 5, 2017
Detailed Description Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z Low VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A...
Datasheet PDF File 2SB1386 PDF File

2SB1386
2SB1386


Overview
Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z Low VCE(sat)=-0.
35V(Typ.
) (IC/IB=-4A/-0.
1A).
Pb Lead-free z Excellent DC current gain characteristics.
z Complementary: 2SD2098.
2SB1386 APPLICATIONS z Low frequency transistor.
ORDERING INFORMATION Type No.
Marking 2SB1386 BHP/BHQ/BHR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage -30 -20 VEBO IC PC RθJA Emitter-Base Voltage Collector Current Collector Dissipation -6 DC -5 Pulse -10 500 Thermal Resistance,,Junction-to- Ambient 300 RθJC Thermal Resistance,Junction -to-Case 80 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A mW ℃/W ℃/W ℃ E024 Rev.
A www.
gmicroelec.
com 1 Production specification PNP Silicon Epitaxial Planar Transistor 2SB1386 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test condition...


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