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2SB1260

Part Number	2SB1260
Manufacturer	Kexin
Description	PNP Transistors
Published	Aug 5, 2017
Detailed Description	SMD Type Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO= -80V, IC=-1A Good hFE linear...
Datasheet	2SB1260 PDF File

Overview

SMD Type Power Transistor 2SB1260 Features High breakdown voltage and high current.
BVCEO= -80V, IC=-1A Good hFE linearity.
Low VCE(sat).
Epitaxial planar type PNP silicon transistor Transistors Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature * Single pulse, Pw=100ms Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol VCBO VCEO VEBO IC ICP * PC Tj Tstg Rating -80 -80 -5 -1 -2 0.
5 150 -55 to +150 Unit V V V A A W Symbol Testconditons BVCBO IC=-50ìA BVCEO IC=-1mA BVEBO IE=-50ìA ICBO VCB=-60V IEBO VEB=-4V hFE VCE=-3V, IC=-0.
1A VCE(sat) IC=-500mA,IB=-50...

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