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2SB1260

Part Number	2SB1260
Manufacturer	HOTTECH
Description	PNP Transistor
Published	Aug 5, 2017
Detailed Description	Plastic-Encapsulate Transistors FEATURES • High breakdown voltage and high current. BVCEO=-80V,IC=-1A • Good hFEVLinear...
Datasheet	2SB1260 PDF File

Overview

Plastic-Encapsulate Transistors FEATURES • High breakdown voltage and high current.
BVCEO=-80V,IC=-1A • Good hFEVLinearity.
• Low VCE(sat).
• Complements the 2SD1898.
2SB1260(PNP) Marking: ZL Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -80 VCEO -80 VEBO -5 IC 1 PC 500 TJ 150 Tstg -55to +150 Unit V V V A mW 1.
BASE 2.
COLLECTO 3.
EMITTER SOT-89 ELECTRICAL CHARACTERISTICS ( @ Ta=25 Parameter Symbol Collector-base breakdown voltage VCBO unless otherwise specified) Test conditions IC=-50μA IE=0 Min Typ -80 Max Unit V Collector-emitter breakdown voltage VCEO IC=-1mA IB=0 -80 V Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current VEBO ICBO IEBO IE=-50μA IC=0 VCB=-60V IE=0 VEB=-4V,IC=0 -5 V -1 μA -1 μA DC current gain h...

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