JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO. , LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB1260 TRANSISTOR (PNP)
FEATURES z Power Transistor z High Voltage and Current z Low Collector-emitter saturation voltage z Complements the 2SD1898
SOT-89-3L
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value -80 -80 -5 -1 500 250 150
-55~+150
Unit V V V A
mW ℃/W
℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance
Transition frequency
Symb...
2SB1260 PDF File
