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2SB1189

HOTTECH
Part Number 2SB1189
Manufacturer HOTTECH
Description PNP Transistor
Published Aug 5, 2017
Detailed Description Plastic-Encapsulate Transistors FEATURES • High breakdown voltage • Complements to 2SD1767 2SB1189(PNP) Maximum Ratin...
Datasheet PDF File 2SB1189 PDF File

2SB1189
2SB1189


Overview
Plastic-Encapsulate Transistors FEATURES • High breakdown voltage • Complements to 2SD1767 2SB1189(PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -80 VCEO -80 VEBO -5 IC 0.
7 PC 500 TJ 150 Tstg -55to +150 Unit V V V A mW ELECTRICAL CHARACTERISTICS ( @ Ta=25 Parameter Symbol unless otherwise specified) Test conditions Collector-base breakdown voltage VCBO IC=-50μA,IE=0 Collector-emitter breakdown voltage VCEO IC=-2mA,IB=0 Emitter-base breakdown voltage VEBO IE=-50μA,IC=0 Collector cut-off current ICBO VCB=-50V,IE=0 Emitter cut-off current IEBO VEB=-4V,IC=0 DC current gain hFE VCE=-3V,IC=-100mA Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA Transition frequency fT VCE=-10V,IC=-50mA,f=100MHz Collector output capacitance Cob VC...


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