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2SB1189

JCET
Part Number 2SB1189
Manufacturer JCET
Description PNP Transistor
Published Aug 5, 2017
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1189 TRANSISTOR (PNP) ...
Datasheet PDF File 2SB1189 PDF File

2SB1189
2SB1189


Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1189 TRANSISTOR (PNP) SOT-89-3L FEATURES z High breakdown voltage z Complements to 2SD1767 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 1.
BASE 2.
COLLECTOR 1 2 3.
EMITTER 3 Symbol Parameter VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -80 -80 -5 -0.
7 0.
5 150 -55~150 Unit V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test conditions V(BR)CBO IC=-50μA,IE=0 V(BR)CEO IC=-2mA,IB=0 V(BR)EBO IE=-50μA,IC=0 ICBO ...


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