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2SB1188

GME
Part Number 2SB1188
Manufacturer GME
Description Medium power transistor
Published Aug 5, 2017
Detailed Description Production specification Medium power transistor FEATURES z Low VCE(SAT)=-0.5V(Typ.) (IC/IB=-1.5A/-0.15A). z Complement...
Datasheet PDF File 2SB1188 PDF File

2SB1188
2SB1188


Overview
Production specification Medium power transistor FEATURES z Low VCE(SAT)=-0.
5V(Typ.
) (IC/IB=-1.
5A/-0.
15A).
z Complementary the 2SD1766.
Pb Lead-free 2SB1188 APPLICATIONS z Epitaxial planar type.
z PNP silicon transistor.
ORDERING INFORMATION Type No.
Marking 2SB1188 BCP/BCQ/BCR SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO IC PC Emitter-Base Voltage Collector Current –DC -Pulse Collector power dissipation -5 V -2 -3 A 350 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ E036 Rev.
A www.
gmicroelec.
com 1 Production specification Medium power transistor 2SB1188 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50μA IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA IB=0 -32...


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