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2SB1132

HOTTECH
Part Number 2SB1132
Manufacturer HOTTECH
Description PNP Transistor
Published Aug 5, 2017
Detailed Description Plastic-Encapsulate Transistors FEATURES • Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA • Compliments 2SD1664 2SB1132 (...
Datasheet PDF File 2SB1132 PDF File

2SB1132
2SB1132


Overview
Plastic-Encapsulate Transistors FEATURES • Low VCE(sat): -0.
2V(Typ) IC/IB=-500mA/-50mA • Compliments 2SD1664 2SB1132 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -40 VCEO -32 VEBO -5 IC 1 PC 500 TJ 150 Tstg -55to +150 Unit V V V A mW ELECTRICAL CHARACTERISTICS ( @ Ta=25 Parameter Symbol unless otherwise specified) Test conditions Collector-base breakdown voltage VCBO IC=-50μA,IE=0 Collector-emitter breakdown voltage VCEO IC=-1mA,IB=0 Emitter-base breakdown voltage VEBO IE=-50μA,IC=0 Collector cut-off current ICBO VCB=-20V,IE=0 Emitter cut-off current IEBO VEB=-4V,IC=0 DC current gain hFE VCE=-3V,IC=-100mA Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA Transition frequency fT VCE=-5V,IC=-50mA,f=30MHz Collector output capa...


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