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2SB1132

JCET
Part Number 2SB1132
Manufacturer JCET
Description PNP Transistor
Published Aug 5, 2017
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1132 TRANSISTOR (PNP) ...
Datasheet PDF File 2SB1132 PDF File

2SB1132
2SB1132


Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1132 TRANSISTOR (PNP) FEATURES z Low VCE(sat) z Compliments 2SD1664 SOT-89-3L 1.
BASE 2.
COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3.
EMITTER Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Continuous Collector Current ICP Pulsed Collector Current PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature Value -40 -32 -5 -1 -2 500 150 -55~150 Unit V V V A A mW ℃ ℃ 6LQJOHSXOVH,3: PV ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) 1 2 3 Parameter Collector-base breakdown voltage Symbol Test conditions V(BR)CBO IC=-50μA,IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=-50μA,IC=0 Collector cut-off current ICBO VCB=-20V,IE=0 Emitter cut-off current IEBO VEB=-4V,IC=0 DC cu...


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