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2SB1132

GME
Part Number 2SB1132
Manufacturer GME
Description PNP General Purpose Amplifier
Published Aug 5, 2017
Detailed Description Production specification PNP General Purpose Amplifier FEATURES z Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-500mA/-50mA). z Com...
Datasheet PDF File 2SB1132 PDF File

2SB1132
2SB1132


Overview
Production specification PNP General Purpose Amplifier FEATURES z Low VCE(SAT)=-0.
2V(Typ.
) (IC/IB=-500mA/-50mA).
z Complementary NPN type available 2SD1664.
Pb Lead-free 2SB1132 APPLICATIONS z This device is designed as a general purpose amplifier and switching.
ORDERING INFORMATION Type No.
Marking 2SB1132 BAP/BAQ/BAR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO IC PD Emitter-Base Voltage Collector Current –DC -Pulse Total Device Dissipation -5 V -1 -2 A 500 mW RθJA Thermal resistance,Junction-to-Ambient 250 ℃/W Tj,Tstg Junction and Storage Temperature -55 to+150 ℃ E028 Rev.
A www.
gmicroelec.
com 1 Production specification PNP General Purpose Amplifier 2SB1132 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown vo...


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