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2SA966

JCET
Part Number 2SA966
Manufacturer JCET
Description PNP Transistor
Published Aug 5, 2017
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SA966 TRANSISTOR (PNP) FEATU...
Datasheet PDF File 2SA966 PDF File

2SA966
2SA966


Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-92L Plastic-Encapsulate Transistors 2SA966 TRANSISTOR (PNP) FEATURE Complementary to 2SC2236 and 3 Watts Output Applications.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.
5 A Pc Collector Power Dissipation 0.
9 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ TO-92L 1.
EMITTER 2.
COLLECTOR 3.
BASE ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test conditions V(BR)CBO IC= -1mA , IE=0 V(BR)CEO IC= -10mA ,IB=0 ...


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