Silicon Planar Epitaxial Transistor
FEATURES
z Low saturation voltage z High speed switching time
Pb
Lead-free
z Small flat package
z PC=1. 0 to 2. 0W(mounted on ceramic substrate)
z Complementary to 2SC2873
Production specification
2SA1213
ORDERING INFORMATION
Type No.
Marking
2SA1213
NO/NY
SOT-89
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO VCEO VEBO IC IB
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
PC Collector Dissipation
Tj,Tstg
Junction and Storage Temperature
Note1:Mounted on ceramic substrate(250mm2*0. 8t)
-50
-50 -5
-2
-0. 4 500 1000(Note1) -55 to +150
Units V V V A A mW ℃
E040 Rev. A
www. gmicroelec. com 1
Production specification
Silicon Planar Epitaxial Transistor
2SA1213
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-emitter breakdown voltage V(BR)CEO IC=-1...