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2SA1203

Part Number	2SA1203
Manufacturer	GME
Description	PNP Transistor
Published	Aug 5, 2017
Detailed Description	Silicon Planar Epitaxial Transistor FEATURES z Suitable for output stage of 3 watts amplifier Pb Lead-free z Suitable...
Datasheet	2SA1203 PDF File

Overview

Silicon Planar Epitaxial Transistor FEATURES z Suitable for output stage of 3 watts amplifier Pb Lead-free z Suitable flat package z PC=1.
0 to 2.
0W(mounted on ceramic substrate) z Complementary to 2SC2883 Production specification 2SA1203 ORDERING INFORMATION Type No.
Marking 2SA1203 HO1/HY1 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC IB PC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Tj,Tstg Junction and Storage Temperature Note1:Mounted on ceramic substrate(250mm2*0.
8t) -30 -30 -5 -1.
5 -0.
3 500 1000(Note 1) -55 to +150 Units V V V A A mW ℃ E038 Rev.
A www.
gmicroelec.
com 1 Production specification Silicon Planar Epitaxial Transistor 2SA1203 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-emitter breakdown voltage V(BR)CEO IC...

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