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T2400GB45E

IXYS
Part Number T2400GB45E
Manufacturer IXYS
Description Insulated Gate Bi-Polar Transistor
Published Aug 1, 2017
Detailed Description Date:- 27 Nov, 2014 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings ...
Datasheet PDF File T2400GB45E PDF File

T2400GB45E
T2400GB45E

Overview
Date:- 27 Nov, 2014 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage MAXIMUM LIMITS 4500 2800 ±20 UNITS V V V IC ICRM IECO PMAX Tj op Tstg RATINGS Continuous DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (note 2) Operating temperature range Storage temperature range Notes: - 1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop induc...


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