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T2250AB25E

IXYS
Part Number T2250AB25E
Manufacturer IXYS
Description Insulated Gate Bi-Polar Transistor
Published Aug 1, 2017
Detailed Description WESTCODE An IXYS Company Date:- 25 Jan, 2011 Data Sheet Issue:- P1 Prospective Data Insulated Gate Bi-Polar Transistor...
Datasheet PDF File T2250AB25E PDF File

T2250AB25E
T2250AB25E

Overview
WESTCODE An IXYS Company Date:- 25 Jan, 2011 Data Sheet Issue:- P1 Prospective Data Insulated Gate Bi-Polar Transistor Type T2250AB25E Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage MAXIMUM LIMITS 2500 1250 ±20 UNITS V V V IC(DC) ICRM IECO PMAX Tjop Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (Note 2) Operating temperature range.
Storage temperature range.
Notes: - 1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side coo...


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