DatasheetsPDF.com

T0500ND25E

IXYS
Part Number T0500ND25E
Manufacturer IXYS
Description Insulated Gate Bi-Polar Transistor
Published Aug 1, 2017
Detailed Description Date:- 16 Aug, 2016 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type T0500ND25E Absolute Maximum Ratings ...
Datasheet PDF File T0500ND25E PDF File

T0500ND25E
T0500ND25E

Overview
Date:- 16 Aug, 2016 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type T0500ND25E Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage MAXIMUM LIMITS 2500 1250 ±20 UNITS V V V IC(DC) ICRM IECO PMAX Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (Note 2) Operating temperature range.
Storage temperature range.
Notes: 1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 850n...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)