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K3380

Part Number	K3380
Manufacturer	Hitachi
Description	Silicon N Channel MOS FET
Published	Aug 1, 2017
Detailed Description	2SK3380 Silicon N Channel MOS FET High Speed Switching Features • Low on-resistance RDS =1.26 Ω typ. (VGS = 10 V , ID =...
Datasheet	K3380 PDF File

Overview

2SK3380 Silicon N Channel MOS FET High Speed Switching Features • Low on-resistance RDS =1.
26 Ω typ.
(VGS = 10 V , ID = 150 mA) RDS = 2.
8 Ω typ.
(VGS = 4 V , ID = 50 mA) • 4 V gate drive device.
Outline SPAK ADE-208-806 (Z) 1st.
Edition.
June 1999 D G S 123 1.
Source 2.
Drain 3.
Gate 2SK3380 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR Pch Channel temperature Tch Storage temperature Tstg Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1% Ratings 30 ±20 300 1.
2 300 300 150 –55 to +150 Unit V V mA A mA mW °C °C Elec...

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