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BCW89

Part Number	BCW89
Manufacturer	CDIL
Description	SILICON PLANAR EPITAXIAL TRANSISTORS
Published	Jul 18, 2017
Detailed Description	Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC...
Datasheet	BCW89 PDF File

Overview

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW89 = H3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature D.
C.
current gain at Tj = 25 °C –IC = 2 mA; —VCE = 5 V Transition frequency at f: 35 MHz –IC = 10 mA; –VCE = 5 V Noise figure at RS = 2 kW –IC = 200 mA; –VCE = 5 V; f = 1 kHz; B = 200 Hz –VCB0 max.
–VCE0 max.
–ICM max.
Ptot max.
Tj max.
> hFE <...

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