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2SD1782

GME
Part Number 2SD1782
Manufacturer GME
Description Medium Power Transistor
Published Jul 16, 2017
Detailed Description Medium Power Transistor FEATURES z Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA) z High VCEO, VCEO=80V z Com...
Datasheet PDF File 2SD1782 PDF File

2SD1782
2SD1782

Overview
Medium Power Transistor FEATURES z Low VCE(sat).
VCE(sat) =0.
2V(Typ.
) (IC / IB=0.
5 A / 50mA) z High VCEO, VCEO=80V z Complements the 2SB1198K.
Pb Lead-free APPLICATIONS z Epitaxial planar type NPN silicon transistor.
Production specification 2SD1782 SOT-23 ORDERING INFORMATION Type No.
Marking 2SD1782 AJ Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 80 Units V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 0.
5 mA PC Collector Dissipation 0.
2 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ C251 Rev.
A www.
gmicroelec.
com 1 Med...


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