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2SC536M

LZG
Part Number 2SC536M
Manufacturer LZG
Description SILICON NPN TRANSISTOR
Published Jul 16, 2017
Detailed Description 2SC536M(3DG536M) 2SC536KM(3DG536KM) NPN /SILICON NPN TRANSISTOR :。 Purpose: Small signal general purpose amplifier ap...
Datasheet PDF File 2SC536M PDF File

2SC536M
2SC536M

Overview
2SC536M(3DG536M) 2SC536KM(3DG536KM) NPN /SILICON NPN TRANSISTOR :。 Purpose: Small signal general purpose amplifier applications.
/Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO 3DG536M 3DG536KM 3DG536M 3DG536KM 40 55 V 30 50 V 5.
0 V IC 100 mA ICP 300 mA PC 250 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Condition Min Rating Typ Max Unit ICBO VCB=35V IE=0 1.
0 μA IEBO VEB=4.
0V IC=0 1.
0 μA hFE VCE=6.
0V IC=1.
0mA 60 960 VCE(sat) IC=50mA IB=5.
0mA 0.
5 V fT VCE=6.
0V IC=1.
0mA 100 MHz Cob VCB=6.
0V IE=0 f=1.
0MHz 3.
5 pF CC.
rbb′ VCB=6.
0V Ic=1.
0mA f=31.
9MHz hFE 、/hFE classifications、Marking： hFE hFE Classifications D E hFE hFE Range 60～120 100～200 Markin...


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