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MBRF20200CT

Part Number	MBRF20200CT
Manufacturer	ON Semiconductor
Description	Schottky Power Rectifier
Published	Jul 6, 2017
Detailed Description	MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Ba...
Datasheet	MBRF20200CT PDF File

Overview

MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact.
Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes.
Features • Highly Stable Oxide Passivated Junction • Very Low Forward Voltage Drop • Matched Dual Die Construction • High Junction Temperature Capability • High dv/dt Capability • Guardring for Stress Protection • Epoxy Meets UL 94 V−0 @ 0.
125 in • Electrica...

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