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2N6678

MA-COM
Part Number 2N6678
Manufacturer MA-COM
Description NPN High Power Silicon Transistor
Published Jul 5, 2017
Detailed Description 2N6676 & 2N6678 NPN High Power Silicon Transistor Features  Available in JAN, JANTX, JANTXV per MIL-PRF-19500/538  TO-...
Datasheet PDF File 2N6678 PDF File

2N6678
2N6678

Overview
2N6676 & 2N6678 NPN High Power Silicon Transistor Features  Available in JAN, JANTX, JANTXV per MIL-PRF-19500/538  TO-3 (TO-204AA) Package Rev.
V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Emitter - Base Cutoff Current Collector - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Test Conditions Symbol Units Min.
IC = 200 mAdc, 2N6676 IC = 200 mAdc, 2N6678 V(BR)CEO Vdc VCE = 450 Vdc, VBE = -1.
5 Vdc, 2N6676 VCE = 650 Vdc, VBE = -1.
5 Vdc, 2N6678 ICEX µAdc VEB = 7 Vdc IEBO mAdc VCB = 450 Vdc, 2N6676 VCB = 650 Vdc, 2N6678 ICBO mAdc 300 400 — — — IC = 1 Adc, VCE = 3 Vdc IC ...


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