Silicon PNP Darlington Power Transistor - Inchange Semiconductor
Description
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2N6666
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -40V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.
0V(Max)@ IC= -3A ·Complement to Type 2N6386
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40 V
VCEO
Collector-Emitter Voltage
-40 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-8 A
ICM Collector Current-Peak
-15 A
IBB Base Current-DC
Collector Power Dissipation
PC
TC=25℃ Collector Power Dissipation
Ta=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
-250 65 2 150 -65~150
mA W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case
1.
92 ℃/W
Th...
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