Transistor - Multicomp
Description
Transistor
Description:
High voltage, TO-3, NPN, Silicon, Power Transistor.
Designed for high voltage inverters, switching regulators and line – operated amplifier applications.
Especially well suited for switching power supply applications in associated consumer products.
Features:
• Low Collector Emitter Saturation Voltage : VCE(sat) 1.
5V(Max.
) @ IC - 3A • Current Gain-bandwidth Product : 5MHz (Min.
) @ IC - 0.
3A
Absolute Maximum Ratings:
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Continuous Collector Current, IC Base Current IB Total Device Dissipation (TC = +25°C), PD Derate above 25°C
Operating Junction Temperature Range, TJ Storage Temperature Range, Tstg
: 700V : 350V : 8V : 8A : 4A : 125W : 0.
714mW/°C : -65°C to +200°C : -65°C to +200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics Collector-Emitter Breakdown Voltage Coll...
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