2N6387 2N6388
SILICO NPN POWER DARLINGTON TRANSISTORS
s 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE
s NPN DARLINGTON s HIGH CURRENT CAPABILITY s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
DESCRIPTION The 2N6387 and 2N6388 are silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package.
They are inteded for use in low and medium frequency power applications.
3 2 1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO VCEV VCER VCEO VEBO
IC ICM IB Ptot Tstg Tj
Collector-Base Voltage (IB = 0) Collector-Emitter Voltage (VBE = -1. 5V) Collector-Emitter Voltage (RBE ≤ 100Ω) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Total Dissipation at Tc ≤ 25 oC Storage Temperature Max. Operating Junction Temperature
June 1997
R1 Typ. = 10 KΩ
R2 Typ. = 160 Ω
Value
2N6387
2N6388
60 80
60 80
60 80
60 80
5
10
15
...