COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS - Seme LAB
Description
MECHANICAL DATA Dimensions in mm (inches)
3.
68 (0.
145) rad.
max.
3.
61 (0.
142) 4.
08(0.
161)
rad.
12
2N6315 2N6317
6.
35 (0.
250) 8.
64 (0.
340)
COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS
COMPLEMENTARY TRANSISTORS 2N6315 (NPN) AND 2N6317 (PNP)
24.
13 (0.
95) 24.
63 (0.
97) 14.
48 (0.
570) 14.
99 (0.
590)
0.
71 (0.
028) 0.
86 (0.
034) 11.
94 (0.
470) 12.
70 (0.
500)
4.
83 (0.
190) 5.
33 (0.
210)
9.
14 (0.
360) min.
1.
27 (0.
050) 1.
91 (0.
750)
Pin 1 –Base
TO–66 (TO-213AA)
Pin 2 –Emitter
Case – Collector
FEATURES • Low Collector Emitter Saturation Voltage • Low Leakage Current • Excellent DC Current Gain
APPLICATIONS: Designed for general purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated)
VCEO
Collector – Emitter Voltage
VCBO
Collector – Base Voltage
VEBO
Emitter – Base Voltage
IC Collector Current
Continuous
Peak
IB Base Current PD Total Dissipation @ TC = 25°C
Derate above 25°C
TSTG , TJ RθJC
Operating and ...
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