COMPLEMENTARY SILICON POWER TRANSISTORS - Central Semiconductor
Description
2N6315 2N6316 NPN 2N6317 2N6318 PNP
COMPLEMENTARY SILICON POWER TRANSISTORS
w w w.
c e n t r a l s e m i .
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DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6315 series devices are complementary silicon power transistors, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications.
TO-66 CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC
2N6315 2N6317
60
2N6316 2N6318
80
60 80
5.
0
7.
0
15
2.
0
90
-65 to +200
1.
95
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICEV
VCE=Rated VCEO, VBE=1.
5V
ICEV
VCE=Rated VCEO, VBE=1.
5V, TC=150°C
ICEO
VCE=1/2 Rated VCEO
IEBO
VEB=5.
0V
BVCEO ...
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