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BZT52C6V2S Datasheet

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BZT52C6V2S Plastic-Encapsulate Diodes

Plastic-Encapsulate Diodes ZENER DIODES FEATURES Planar die construction General purpose, Medium current Ideally suited for automated assembly processes Available in Lead free version BZT52C2V0S---BZT52C39S -+ SOD-323 Maximum Ratings @ Ta=25℃ unless otherwise specified Characteristic Forward Vol.

Features

Planar die construction General purpose, Medium current Ideally suited for automated assembly processes Available in Lead free version BZT52C2V0S---BZT52C39S -+ SOD-323 Maximum Ratings @ Ta=25℃ unless otherwise specified Characteristic Forward Voltage @ IF=10mA Symbol VF Value 0.9 Power Dissipation Pd 200 Thermal resistance,junction to ambient air RθjA 625 Junction temperature Tj 150 Storage temperature range Tstg -65-150 Notes: 1. Valid provided that device terminals are kept at ambient temperature. 2. Short duration test pulse used in minimize self-heating effect. 3. f = 1KHz. .

BZT52C6V2S BZT52C6V2S BZT52C6V2S

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