Main Product Characteristics:
VDSS
110V
RDS(on) 6. 7mohm(typ. ) ID 130A
Features and Benefits:
TO220
Advanced trench MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSF1109
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device f...
SSF1109 PDF File
