MOSFET - Silikron
Description
Main Product Characteristics:
VDSS RDS(on)
50V 1.
4Ω (typ.
)
ID 0.
2A
SOT-323
Features and Benefits:
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery ESD Rating：1000V HBM 150℃ operating temperature
BSS138W
Marking and Pin Assignment
Schematic Diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating:
Symbol ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction a...
Similar Datasheet
