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2N7002KG8

Part Number	2N7002KG8
Manufacturer	Silikron
Description	MOSFET
Published	Jun 28, 2017
Detailed Description	Main Product Characteristics: VDSS 60V RDS(on) 7.5ohm(max.) ID A Features and Benefits:  Advanced trench MOSFET pr...
Datasheet	2N7002KG8 PDF File

Overview

Main Product Characteristics: VDSS 60V RDS(on) 7.
5ohm(max.
) ID A Features and Benefits:  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SOT-363 2N7002KG8 Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applicati...

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